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# Coplanar Metal-Insulator-Metal Capacitor C_MIM

### Notes :

> The introduction of a very small gap capacitance (here 0.18fF) leads to an large enhancement of the model especially at higher frequencies. Excellent agreement between measurement and simulation are achieved up to a frequency of 40GHz. The differences at higher frequencies may result from the calculation of the airbridges or a deviation from the given foundry parameter.

Configuration: CPW line configuration at the ports: 50W1 lines, len=1mm; airbridges: TYPE=2, BW=50, BS=14, BG=8mm; MIM: LC=300mm, DC=200nm, er=7.45; top and bottom electrodes of the MIM have the same line width |

Configuration: CPW line configuration at the ports: 50W1 lines, len=1mm; airbridges: TYPE=2, BW=50, BS=14, BG=8mm; MIM: LC=300mm, DC=200nm, er=7.45; top and bottom electrodes of the MIM have the same line width |

Configuration: 50W line configuration at the ports: LEN=30, W=40, S=30, D=150mm; MIM: ® top electrode: W=40, S=30, D=150mm ® bottom elect.: W=44, S=28, D=150mm LC=145mm, DC=130nm, er=7 |

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